VS-ETF150Y65U Details

VS-ETF150Y65U Images

VS-ETF150Y65U

Part Number
VS-ETF150Y65U
Manufacturer
Vishay Semiconductor Diodes Division
Description
IGBT 650V 150A EMIPAK-2B
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Modules
Series
-
 
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VS-ETF150Y65U Specifications

Part Number VS-ETF150Y65U
Part Status Active
IGBT Type Trench
Configuration Three Level Inverter
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 142A
Power - Max 417W
Vce(on) (Max) @ Vge, Ic 2.06V @ 15V, 100A
Current - Collector Cutoff (Max) 100µA
Input Capacitance (Cies) @ Vce 6.6nF @ 30V
Input Standard
NTC Thermistor No
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case EMIPAK-2B
Supplier Device Package EMIPAK-2B
PDF Part Photo Part Number Manufacturers Description
Datasheet APTGLQ50DDA65T3G Microsemi Corporation POWER MODULE - IGBT
Datasheet APTGLQ50VDA65T3G Microsemi Corporation POWER MODULE - IGBT
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Datasheet APTGT100DA120T1G Microsemi Corporation IGBT 1200V 140A 480W SP1
Datasheet MIXA20W1200TMH IXYS IGBT MODULE 1200V 28A HEX
Datasheet MITA10WB1200TMH IXYS MODULE IGBT CBI
Datasheet MITB10WB1200TMH IXYS MODULE IGBT CBI
Datasheet APT40GP90JDQ2 Microsemi Corporation IGBT 900V 64A 284W SOT227
Datasheet MIXA10WB1200TML IXYS IGBT MODULE 1200V 12A HEX
Datasheet IXA220I650NA IXYS IGBT MODULE 650V SOT227
This page contains 2 electronic component agents, they are : Microsemi Corporation IXYS

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