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HN3C10FUTE85LF Details

HN3C10FUTE85LF

Part Number: HN3C10FUTE85LF

Manufacturer: Toshiba Semiconductor and Storage

Description: TRANSISTOR NPN US6

Category: Discrete Semiconductor Products

Family: Transistors - Bipolar (BJT) - RF

Series: -

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HN3C10FUTE85LF Specifications

Part Number	HN3C10FUTE85LF
Part Status	Active
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	11.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	US6

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