UNR522600L Details

UNR522600L Images

UNR522600L

Part Number
UNR522600L
Manufacturer
Panasonic Electronic Components
Description
TRANS PREBIAS NPN 150MW SMINI3
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - Single, Pre-Biased
Series
-
 
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UNR522600L Specifications

Part Number UNR522600L
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 20V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 80mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 1µA (ICBO)
Frequency - Transition 200MHz
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SMini3-G1
PDF Part Photo Part Number Manufacturers Description
Datasheet DTA143XKAT146 Rohm Semiconductor TRANS PREBIAS PNP 200MW SMT3
Datasheet DTC123EKAT146 Rohm Semiconductor TRANS PREBIAS NPN 200MW SMT3
Datasheet DTC114EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet DTC123JUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet DTC124EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
Datasheet RN1306,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
Datasheet BCR183E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 0.2W SOT23-3
Datasheet BCR116E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.2W SOT23-3
Datasheet RN2101,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
Datasheet RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
This page contains 3 electronic component agents, they are : Rohm Semiconductor Toshiba Semiconductor and Storage Infineon Technologies

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