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    • DRA2543E0L Details

    DRA2543E0L Images

    DRA2543E0L

    Part Number
    DRA2543E0L
    Manufacturer
    Panasonic Electronic Components
    Description
    TRANS PREBIAS PNP 200MW MINI3
    Category
    Discrete Semiconductor Products
    Family
    Transistors - Bipolar (BJT) - Single, Pre-Biased
    Series
    -
     
    Add to Cart
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    DRA2543E0L Specifications

    Part Number DRA2543E0L
    Part Status Active
    Transistor Type PNP - Pre-Biased
    Current - Collector (Ic) (Max) 500mA
    Voltage - Collector Emitter Breakdown (Max) 50V
    Resistor - Base (R1) 4.7 kOhms
    Resistor - Emitter Base (R2) 4.7 kOhms
    DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 10V
    Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 100mA
    Current - Collector Cutoff (Max) 1µA
    Frequency - Transition -
    Power - Max 200mW
    Mounting Type Surface Mount
    Package / Case TO-236-3, SC-59, SOT-23-3
    Supplier Device Package Mini3-G3-B
    PDF Part Photo Part Number Manufacturers Description
    Datasheet DTA143XKAT146 Rohm Semiconductor TRANS PREBIAS PNP 200MW SMT3
    Datasheet DTC123EKAT146 Rohm Semiconductor TRANS PREBIAS NPN 200MW SMT3
    Datasheet DTC114EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC123JUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet DTC124EUBTL Rohm Semiconductor TRANS PREBIAS NPN 200MW UMT3F
    Datasheet RN1306,LF Toshiba Semiconductor and Storage TRANS PREBIAS NPN 0.1W USM
    Datasheet BCR183E6327HTSA1 Infineon Technologies TRANS PREBIAS PNP 0.2W SOT23-3
    Datasheet BCR116E6327HTSA1 Infineon Technologies TRANS PREBIAS NPN 0.2W SOT23-3
    Datasheet RN2101,LF(CT Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    Datasheet RN2101(T5L,F,T) Toshiba Semiconductor and Storage TRANS PREBIAS PNP 0.1W SSM
    This page contains 3 electronic component agents, they are : Rohm Semiconductor Toshiba Semiconductor and Storage Infineon Technologies

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