| Part Number | PDTA114EQAZ |
|---|---|
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| Frequency - Transition | 180MHz |
| Power - Max | 280mW |
| Mounting Type | Surface Mount |
| Package / Case | 3-XDFN Exposed Pad |
| Supplier Device Package | DFN1010D-3 |
| Part Photo | Part Number | Manufacturers | Description | |
|---|---|---|---|---|
| Datasheet |  |
DTA143XKAT146 | Rohm Semiconductor | TRANS PREBIAS PNP 200MW SMT3 |
| Datasheet |  |
DTC123EKAT146 | Rohm Semiconductor | TRANS PREBIAS NPN 200MW SMT3 |
| Datasheet |  |
DTC114EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
DTC123JUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
DTC124EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F |
| Datasheet |  |
RN1306,LF | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W USM |
| Datasheet |  |
BCR183E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.2W SOT23-3 |
| Datasheet |  |
BCR116E6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 0.2W SOT23-3 |
| Datasheet |  |
RN2101,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |
| Datasheet |  |
RN2101(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |
