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EPC2105ENG Details

EPC2105ENG

Part Number: EPC2105ENG

Manufacturer: EPC

Description: TRANS GAN 2N-CH 80V BUMPED DIE

Category: Discrete Semiconductor Products

Family: Transistors - FETs, MOSFETs - Arrays

Series: eGaN®

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EPC2105ENG Specifications

Part Number	EPC2105ENG
Part Status	Discontinued at Digi-Key
FET Type	2 N-Channel (Half Bridge)
FET Feature	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	9.5A, 38A
Rds On (Max) @ Id, Vgs	14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id	2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 40V
Power - Max	-
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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Datasheet	SI7949DP-T1-E3	Vishay Siliconix	MOSFET 2P-CH 60V 3.2A PPAK SO-8
Datasheet	SI7913DN-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 5A PPAK 1212-8
Datasheet	SI4943CDY-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 8A 8-SOIC
Datasheet	STL65DN3LLH5	STMicroelectronics	MOSFET 2N-CH 30V 65A POWERFLAT