Part Number | DRDPB16W-7 |
---|---|
Part Status | Active |
Transistor Type | PNP - Pre-Biased + Diode |
Current - Collector (Ic) (Max) | 600mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SOT-363 |
Part Photo | Part Number | Manufacturers | Description | |
---|---|---|---|---|
Datasheet | DTA143XKAT146 | Rohm Semiconductor | TRANS PREBIAS PNP 200MW SMT3 | |
Datasheet | DTC123EKAT146 | Rohm Semiconductor | TRANS PREBIAS NPN 200MW SMT3 | |
Datasheet | DTC114EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | DTC123JUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | DTC124EUBTL | Rohm Semiconductor | TRANS PREBIAS NPN 200MW UMT3F | |
Datasheet | RN1306,LF | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W USM | |
Datasheet | BCR183E6327HTSA1 | Infineon Technologies | TRANS PREBIAS PNP 0.2W SOT23-3 | |
Datasheet | BCR116E6327HTSA1 | Infineon Technologies | TRANS PREBIAS NPN 0.2W SOT23-3 | |
Datasheet | RN2101,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM | |
Datasheet | RN2101(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS PNP 0.1W SSM |