| Part Number | AO6608 |
|---|---|
| Part Status | Active |
| FET Type | N and P-Channel Complementary |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Ta), 3.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.4A, 10V, 75 mOhm @ 3.3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA, 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 3nC @ 4.5V, 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 15V, 510pF @ 10V |
| Power - Max | 1.25W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | 6-TSOP |
| Part Photo | Part Number | Manufacturers | Description | |
|---|---|---|---|---|
| Datasheet |  |
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FDS3890 | ON Semiconductor | MOSFET 2N-CH 80V 4.7A 8-SO |
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SI7949DP-T1-E3 | Vishay Siliconix | MOSFET 2P-CH 60V 3.2A PPAK SO-8 |
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SI7913DN-T1-GE3 | Vishay Siliconix | MOSFET 2P-CH 20V 5A PPAK 1212-8 |
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| Datasheet |  |
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